Abstract
Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
| Original language | English |
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| Title of host publication | 2009 IEEE Nanotechnology Materials and Devices Conference |
| Publisher | IEEE - Institute of Electrical and Electronics Engineers Inc. |
| Pages | 183-185 |
| Publication status | Published - 2009 |
| Event | IEEE Nanotechnology Materials and Devices Conference - Traverse City, MI, United States Duration: 2009 Jun 2 → 2009 Jun 5 |
Conference
| Conference | IEEE Nanotechnology Materials and Devices Conference |
|---|---|
| Country/Territory | United States |
| City | Traverse City, MI |
| Period | 2009/06/02 → 2009/06/05 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- High-kappa dielectric
- InGaAs/InP
- Quantum devices