Gate defined quantum dot realized in a single crystalline InSb nanosheet

Jianhong Xue, Yuanjie Chen, Dong Pan, Ji Yin Wang, Jianhua Zhao, Shaoyun Huang, H. Q. Xu

Research output: Contribution to journalArticlepeer-review

4 Citations (SciVal)

Abstract

A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

Original languageEnglish
Article number023108
JournalApplied Physics Letters
Volume114
Issue number2
DOIs
Publication statusPublished - 2019

Subject classification (UKÄ)

  • Nano Technology

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