Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S. Plissard, Kimberly Dick Thelander, X. Wallart, P. Caroff

Research output: Contribution to journalArticlepeer-review

Abstract

Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
Original languageEnglish
Article number121901
JournalApplied Physics Letters
Volume96
Issue number12
DOIs
Publication statusPublished - 2010

Subject classification (UKÄ)

  • Condensed Matter Physics

Free keywords

  • semiconductor quantum wires
  • semiconductor
  • semiconductor growth
  • nanowires
  • nanofabrication
  • growth
  • molecular beam epitaxial
  • gallium arsenide
  • III-V semiconductors
  • heterojunctions

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