Abstract
Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
Original language | English |
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Article number | 121901 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2010 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- semiconductor quantum wires
- semiconductor
- semiconductor growth
- nanowires
- nanofabrication
- growth
- molecular beam epitaxial
- gallium arsenide
- III-V semiconductors
- heterojunctions