Growth and characterization of single crystal semiconductor nanowires

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

Nanowire technology allows a bottom-up approach towards fabricating extremely small devices with negligible surface damage and with very high materials quality. The control of position, dimensions and formation of abrupt heterostructures will be described and examples of electronic and photonic devices can be created by this approach
Original languageEnglish
Title of host publication2006 IEEE LEOS Annual Meeting Conference
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages106-107
Number of pages2
ISBN (Print)0-7803-9555-7
DOIs
Publication statusPublished - 2006
Event2006 IEEE LEOS Annual Meeting Conference - Montreal, Que., Canada
Duration: 2006 Oct 292006 Nov 2

Conference

Conference2006 IEEE LEOS Annual Meeting Conference
Country/TerritoryCanada
CityMontreal, Que.
Period2006/10/292006/11/02

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • photonic device
  • electronic device
  • single crystal semiconductor nanowires growth
  • semiconductor nanowires characterization

Fingerprint

Dive into the research topics of 'Growth and characterization of single crystal semiconductor nanowires'. Together they form a unique fingerprint.

Cite this