Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy

Alexander Berg, Philippe Caroff, Naeem Shahid, Mark N. Lockrey, Xiaoming Yuan, Magnus T. Borgström, Hark Hoe Tan, Chennupati Jagadish

Research output: Contribution to journalArticlepeer-review

Abstract

Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)672-682
Number of pages11
JournalNano Research
Volume10
Issue number2
Early online date2016 Dec 1
DOIs
Publication statusPublished - 2017 Feb

Subject classification (UKÄ)

  • Nano Technology
  • Condensed Matter Physics

Free keywords

  • cathodoluminescence
  • energy-dispersive X-ray spectroscopy
  • InGaP
  • nanowire
  • selective-area epitaxy

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