Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires

Niklas Sköld, Lisa Karlsson, Magnus Larsson, Mats-Erik Pistol, Werner Seifert, Johanna Trägårdh, Lars Samuelson

Research output: Contribution to journalArticlepeer-review

230 Citations (SciVal)


We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.
Original languageEnglish
Pages (from-to)1943-1947
JournalNano Letters
Issue number10
Publication statusPublished - 2005

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Subject classification (UKÄ)

  • Nano Technology


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