Growth of InAs NWs with controlled morphology by CVD

Y. S. Huang; M. Li; J. Wang; Y. Xing; H. Q. Xu

doi:10.1088/1742-6596/864/1/012013

Growth of InAs NWs with controlled morphology by CVD

Y. S. Huang, M. Li, J. Wang, Y. Xing, H. Q. Xu

Peking University

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the growth of single crystal InAs NWs on Si/SiO_x substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiO_x substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

Original language	English
Article number	012013
Journal	Journal of Physics: Conference Series
Volume	864
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/864/1/012013
Publication status	Published - 2017 Aug 15

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1088/1742-6596/864/1/012013

Cite this

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title = "Growth of InAs NWs with controlled morphology by CVD",

abstract = "We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.",

author = "Huang, {Y. S.} and M. Li and J. Wang and Y. Xing and Xu, {H. Q.}",

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AU - Huang, Y. S.

AU - Li, M.

AU - Wang, J.

AU - Xing, Y.

AU - Xu, H. Q.

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

AB - We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

U2 - 10.1088/1742-6596/864/1/012013

DO - 10.1088/1742-6596/864/1/012013

M3 - Article

AN - SCOPUS:85028760641

SN - 1742-6588

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012013

ER -

Growth of InAs NWs with controlled morphology by CVD

Abstract

Subject classification (UKÄ)

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