Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment

A Sandell, PG Karlsson, JH Richter, Jakob Blomquist, Per Uvdal, TM Grehk

Research output: Contribution to journalArticlepeer-review

27 Citations (SciVal)


The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds. (c) 2006 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2006

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Chemical Physics (S) (011001060)

Subject classification (UKÄ)

  • Atom and Molecular Physics and Optics


Dive into the research topics of 'Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment'. Together they form a unique fingerprint.

Cite this