Heterogeneous integration of InAs on W/GaAs by MOVPE

Gvidas Astromskas, Lars-Erik Wernersson

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

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Abstract

InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.
Original languageEnglish
Title of host publicationJournal of Physics: Conference Series
PublisherIOP Publishing
Pages042043
Volume100
DOIs
Publication statusPublished - 2008
Event17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology - Stockholm, Sweden
Duration: 2007 Jul 22007 Jul 6

Publication series

Name
Volume100
ISSN (Print)1742-6588
ISSN (Electronic)1742-6596

Conference

Conference17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
Country/TerritorySweden
CityStockholm
Period2007/07/022007/07/06

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

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