@inproceedings{97e6337b80334aacaf5e9aff36d8a026,
title = "Heterogeneous integration of InAs on W/GaAs by MOVPE",
abstract = "InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.",
author = "Gvidas Astromskas and Lars-Erik Wernersson",
year = "2008",
doi = "10.1088/1742-6596/100/4/042043",
language = "English",
volume = "100",
publisher = "IOP Publishing",
pages = "042043",
booktitle = "Journal of Physics: Conference Series",
address = "United Kingdom",
note = "17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology ; Conference date: 02-07-2007 Through 06-07-2007",
}