Abstract
Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and up to several hundred nanometer could be inserted into homogenous InAs wires. Further more, electrical measurements on both homogenous wires and wires containing heterostructures have been performed to investigate the functionality of nanowire based device elements
| Original language | English |
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| Title of host publication | 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science |
| Publisher | Lund University |
| Number of pages | 2 |
| Publication status | Published - 2002 |
| Event | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden Duration: 2002 Jun 24 → 2002 Jun 28 |
Conference
| Conference | Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) |
|---|---|
| Country/Territory | Sweden |
| City | Malmö |
| Period | 2002/06/24 → 2002/06/28 |
Subject classification (UKÄ)
- Condensed Matter Physics (including Material Physics, Nano Physics)
Free keywords
- monolayers
- InAs-Au
- nanowire based device elements
- electrical measurements
- transmission electron microscopy
- atomically sharp interfaces
- heterostructure interfaces
- chemically uniform InAs wires
- size selected Au aerosol particles
- chemical beam epitaxy
- III/V nanowires growth
- one dimensional nanowires heterostructures
- barriers