High carrier mobility in low band gap polymer-based field-effect transistors

MX Chen; X Crispin; E Perzon; MR Andersson; Tönu Pullerits; M Andersson; O Inganas; M Berggren

doi:10.1063/1.2142289

High carrier mobility in low band gap polymer-based field-effect transistors

MX Chen, X Crispin, E Perzon, MR Andersson, Tönu Pullerits, M Andersson, O Inganas, M Berggren

Chemical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).

Original language	English
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2142289
Publication status	Published - 2005

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Chemical Physics (S) (011001060)

Subject classification (UKÄ)

Atom and Molecular Physics and Optics

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10.1063/1.2142289

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title = "High carrier mobility in low band gap polymer-based field-effect transistors",

abstract = "A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).",

author = "MX Chen and X Crispin and E Perzon and MR Andersson and T{\"o}nu Pullerits and M Andersson and O Inganas and M Berggren",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)",

year = "2005",

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language = "English",

volume = "87",

journal = "Applied Physics Letters",

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T1 - High carrier mobility in low band gap polymer-based field-effect transistors

AU - Chen, MX

AU - Crispin, X

AU - Perzon, E

AU - Andersson, MR

AU - Pullerits, Tönu

AU - Andersson, M

AU - Inganas, O

AU - Berggren, M

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)

PY - 2005

Y1 - 2005

N2 - A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).

AB - A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm(2) V-1 s(-1).

U2 - 10.1063/1.2142289

DO - 10.1063/1.2142289

M3 - Article

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

High carrier mobility in low band gap polymer-based field-effect transistors

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