High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Anil Dey; Mattias Borg; Bahram Ganjipour; Martin Ek; Kimberly Dick Thelander; Erik Lind; Claes Thelander; Lars-Erik Wernersson

doi:10.1109/LED.2012.2234078

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Anil Dey, Mattias Borg, Bahram Ganjipour, Martin Ek, Kimberly Dick Thelander, Erik Lind, Claes Thelander, Lars-Erik Wernersson

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Abstract

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel ﬁeld-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.

Original language	English
Pages (from-to)	211-213
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2234078
Publication status	Published - 2013

Subject classification (UKÄ)

Condensed Matter Physics
Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

Broken gap
GaSb
III–V
InAs
tunnel ﬁeld-effect transistors (TFETs)

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10.1109/LED.2012.2234078

Dey_TFET_EDL_2012_OA

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title = "High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors",

abstract = "We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel ﬁeld-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.",

keywords = "Broken gap, GaSb, III–V, InAs, tunnel ﬁeld-effect transistors (TFETs)",

author = "Anil Dey and Mattias Borg and Bahram Ganjipour and Martin Ek and {Dick Thelander}, Kimberly and Erik Lind and Claes Thelander and Lars-Erik Wernersson",

year = "2013",

doi = "10.1109/LED.2012.2234078",

language = "English",

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journal = "IEEE Electron Device Letters",

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T1 - High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

AU - Dey, Anil

AU - Borg, Mattias

AU - Ganjipour, Bahram

AU - Ek, Martin

AU - Dick Thelander, Kimberly

AU - Lind, Erik

AU - Thelander, Claes

AU - Wernersson, Lars-Erik

PY - 2013

Y1 - 2013

N2 - We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel ﬁeld-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.

AB - We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel ﬁeld-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.

KW - Broken gap

KW - GaSb

KW - III–V

KW - InAs

KW - tunnel ﬁeld-effect transistors (TFETs)

U2 - 10.1109/LED.2012.2234078

DO - 10.1109/LED.2012.2234078

M3 - Article

SN - 0741-3106

VL - 34

SP - 211

EP - 213

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

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Subject classification (UKÄ)

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