High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Jessica L Boland; Francesca Amaduzzi; Sabrina Sterzl; Heidi Potts; Laura M Herz; Anna Fontcuberta I Morral; Michael B Johnston

doi:10.1021/acs.nanolett.8b00842

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Jessica L Boland, Francesca Amaduzzi, Sabrina Sterzl, Heidi Potts, Laura M Herz, Anna Fontcuberta I Morral, Michael B Johnston

Research output: Contribution to journal › Article › peer-review

Abstract

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.

Original language	English
Pages (from-to)	3703-3710
Number of pages	8
Journal	Nano Letters
Volume	18
Issue number	6
DOIs	https://doi.org/10.1021/acs.nanolett.8b00842
Publication status	Published - 2018 Jun 13
Externally published	Yes

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title = "High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires",

abstract = "InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.",

author = "Boland, {Jessica L} and Francesca Amaduzzi and Sabrina Sterzl and Heidi Potts and Herz, {Laura M} and {Fontcuberta I Morral}, Anna and Johnston, {Michael B}",

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doi = "10.1021/acs.nanolett.8b00842",

language = "English",

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T1 - High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

AU - Boland, Jessica L

AU - Amaduzzi, Francesca

AU - Sterzl, Sabrina

AU - Potts, Heidi

AU - Herz, Laura M

AU - Fontcuberta I Morral, Anna

AU - Johnston, Michael B

PY - 2018/6/13

Y1 - 2018/6/13

N2 - InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.

AB - InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.

U2 - 10.1021/acs.nanolett.8b00842

DO - 10.1021/acs.nanolett.8b00842

M3 - Article

C2 - 29717874

SN - 1530-6992

VL - 18

SP - 3703

EP - 3710

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

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