TY - GEN
T1 - High Frequency Performance of Vertical InAs Nanowire MOSFET
AU - Lind, Erik
AU - Egard, Mikael
AU - Johansson, Sofia
AU - Johansson, Anne-Charlotte
AU - Borg, Mattias
AU - Thelander, Claes
AU - Persson, Karl-Magnus
AU - Dey, Anil
AU - Wernersson, Lars-Erik
PY - 2010
Y1 - 2010
N2 - We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
AB - We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.
U2 - 10.1109/ICIPRM.2010.5516010
DO - 10.1109/ICIPRM.2010.5516010
M3 - Paper in conference proceeding
SN - 978-1-4244-5919-3
BT - 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)
PB - IEEE - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Conference on Indium Phosphide and Related Materials
Y2 - 31 May 2010 through 4 June 2010
ER -