High-k oxides on InAs 100 and 111B surfaces

Erik Lind; Jun Wu; Lars-Erik Wernersson

doi:10.1149/1.3700872

High-k oxides on InAs 100 and 111B surfaces

Erik Lind, Jun Wu, Lars-Erik Wernersson

Department of Electrical and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).

Original language	English
Title of host publication	Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society
Pages	61-67
Volume	45
DOIs	https://doi.org/10.1149/1.3700872
Publication status	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) - Seattle, WA Duration: 2012 May 6 → 2012 May 10

Publication series

Name
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS)
Period	2012/05/06 → 2012/05/10

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Access to Document

10.1149/1.3700872

Cite this

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title = "High-k oxides on InAs 100 and 111B surfaces",

abstract = "Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).",

author = "Erik Lind and Jun Wu and Lars-Erik Wernersson",

year = "2012",

doi = "10.1149/1.3700872",

language = "English",

volume = "45",

publisher = "Electrochemical Society",

number = "3",

pages = "61--67",

booktitle = "Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices",

address = "United States",

note = "5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS) ; Conference date: 06-05-2012 Through 10-05-2012",

}

Lind, E, Wu, J & Wernersson, L-E 2012, High-k oxides on InAs 100 and 111B surfaces. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. vol. 45, Electrochemical Society, pp. 61-67, 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS), 2012/05/06. https://doi.org/10.1149/1.3700872

High-k oxides on InAs 100 and 111B surfaces. / Lind, Erik; Wu, Jun; Wernersson, Lars-Erik.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. Vol. 45 Electrochemical Society, 2012. p. 61-67.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - High-k oxides on InAs 100 and 111B surfaces

AU - Lind, Erik

AU - Wu, Jun

AU - Wernersson, Lars-Erik

PY - 2012

Y1 - 2012

N2 - Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).

AB - Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).

UR - https://www.scopus.com/pages/publications/84869013564

U2 - 10.1149/1.3700872

DO - 10.1149/1.3700872

M3 - Paper in conference proceeding

VL - 45

SP - 61

EP - 67

BT - Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices

PB - Electrochemical Society

T2 - 5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS)

Y2 - 6 May 2012 through 10 May 2012

ER -

High-k oxides on InAs 100 and 111B surfaces

Abstract

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Subject classification (UKÄ)

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