High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Cezar B. Zota; Lars Erik Wernersson; Erik Lind

doi:10.1109/LED.2016.2602841

High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Cezar B. Zota, Lars Erik Wernersson, Erik Lind

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Abstract

We report on In_0.85Ga_0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of I_ON = 565μ/Aμm at I_OFF =100 nA/μm and V_D=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SS_sat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

Original language	English
Article number	7552490
Pages (from-to)	1264-1267
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	10
DOIs	https://doi.org/10.1109/LED.2016.2602841
Publication status	Published - 2016 Oct 1

Subject classification (UKÄ)

Communication Systems

Free keywords

III-V
InGaAs
MOSFET
nanowire

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10.1109/LED.2016.2602841

CBZ_EDL_2016-Rev1Accepted author manuscript, 570 KB

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title = "High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current",

abstract = "We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.",

keywords = "III-V, InGaAs, MOSFET, nanowire",

author = "Zota, {Cezar B.} and Wernersson, {Lars Erik} and Erik Lind",

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AU - Zota, Cezar B.

AU - Wernersson, Lars Erik

AU - Lind, Erik

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Y1 - 2016/10/1

N2 - We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

AB - We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

KW - III-V

KW - InGaAs

KW - MOSFET

KW - nanowire

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M3 - Article

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SP - 1264

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 7552490

ER -

High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

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III-V MOSFETs for High-Frequency and Digital Applications

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