High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique

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Abstract

We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.
Original languageEnglish
Title of host publication26th International Conference on Indium Phosphide and Related Materials (IPRM)
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
DOIs
Publication statusPublished - 2014
Event26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier, FRANCE
Duration: 2014 May 112014 May 15

Publication series

Name
ISSN (Print)1092-8669

Conference

Conference26th International Conference on Indium Phosphide and Related Materials (IPRM)
Period2014/05/112014/05/15

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering

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