High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

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Abstract

In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
Original languageEnglish
Title of host publication2011 IEEE International Electron Devices Meeting (IEDM)
PublisherIEEE Press
ISBN (Print)978-1-4577-0505-2
Publication statusPublished - 2011
EventIEEE International Electron Devices Meeting (IEDM) - Washington, DC
Duration: 2011 Dec 52011 Dec 7

Conference

ConferenceIEEE International Electron Devices Meeting (IEDM)
Period2011/12/052011/12/07

Subject classification (UKÄ)

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

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