Abstract
In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
Original language | English |
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Title of host publication | 2011 IEEE International Electron Devices Meeting (IEDM) |
Publisher | IEEE Press |
ISBN (Print) | 978-1-4577-0505-2 |
Publication status | Published - 2011 |
Event | IEEE International Electron Devices Meeting (IEDM) - Washington, DC Duration: 2011 Dec 5 → 2011 Dec 7 |
Conference
Conference | IEEE International Electron Devices Meeting (IEDM) |
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Period | 2011/12/05 → 2011/12/07 |
Subject classification (UKÄ)
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering