Hole doping of graphene supported on Ir(111) by AlBr3

Nikolay Vinogradov, Konstantin Simonov, Alexei Zakharov, Justin Wells, A. V. Generalov, A. S. Vinogradov, N. Martensson, Alexei Preobrajenski

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter, we report an easy and tenable way to tune the type of charge carriers in graphene, using a buried layer of AlBr3 and its derivatives on the graphene/Ir(111) interface. Upon the deposition of AlBr3 on graphene/Ir(111) and subsequent temperature-assisted intercalation of graphene/Ir(111) with atomic Br and AlBr3, pronounced hole doping of graphene is observed. The evolution of the graphene/Br-AlBr3/Ir(111) system at different stages of intercalation has been investigated by means of microbeam low-energy electron microscopy/electron diffraction, core-level photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790579]
Original languageEnglish
Article number061601
JournalApplied Physics Letters
Volume102
Issue number6
DOIs
Publication statusPublished - 2013

Subject classification (UKÄ)

  • Natural Sciences
  • Physical Sciences

Fingerprint

Dive into the research topics of 'Hole doping of graphene supported on Ir(111) by AlBr3'. Together they form a unique fingerprint.

Cite this