Identification of the gallium vacancy-oxygen pair defect in GaN

N. T. Son, C. G. Hemmingsson, T. Paskova, K. R. Evans, A. Usui, N. Morishita, T. Ohshima, J. Isoya, Bo Monemar, E. Janzen

Research output: Contribution to journalArticlepeer-review

46 Citations (SciVal)


Cation vacancies like V-Ga, V-Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the VGaON pair in GaN which is the model material for the III-nitrides and their alloys.
Original languageEnglish
Article number153202
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number15
Publication statusPublished - 2009

Subject classification (UKÄ)

  • Condensed Matter Physics


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