III-V MOSFETs for High-Frequency and Digital Applications

Cezar Zota

III-V MOSFETs for High-Frequency and Digital Applications

Cezar Zota

Research output: Thesis › Doctoral Thesis (compilation)

2097 Downloads (Pure)

Abstract

III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.

Original language	English
Qualification	Doctor
Awarding Institution	Department of Electrical and Information Technology
Supervisors/Advisors	Lind, Erik, Supervisor Wernersson, Lars-Erik, Supervisor Lind, Erik, Supervisor Borg, Mattias, Supervisor
Award date	2017 May 12
Publisher	Department of Electrical and Information Technology, Lund University
ISBN (Print)	978-91-7753-144-9
ISBN (electronic)	978-91-7753-145-6
Publication status	Published - 2017 Apr 10

Bibliographical note

Defence details
Date: 2017-05-12
Time: 10:15
Place: lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund
External reviewer
Name: Rodwell, Mark
Title: Professor
Affiliation: University of California, Santa Barbara, USA
---

Subject classification (UKÄ)

Engineering and Technology

Free keywords

III-V
MOSFET
Transistor

Access to Document

CBZ_THESIS_20170410Final published version, 16.9 MB

9 Article
3 Paper in conference proceeding

A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Netsu, S., Hellenbrand, M., Zota, C. B., Miyamoto, Y. & Lind, E., 2018, In: IEEE Journal of the Electron Devices Society. 6, p. 408-412
Research output: Contribution to journal › Article › peer-review

Open Access
1/f and RTS noise in InGaAs nanowire MOSFETs
Möhle, C., Zota, C. B., Hellenbrand, M. & Lind, E., 2017 Jun 25, In: Microelectronic Engineering. 178, p. 52-55
Research output: Contribution to journal › Article › peer-review

File
235 Downloads (Pure)
InGaAs tri-gate MOSFETs with record on-current
Zota, C. B., Lindelow, F., Wernersson, L. E. & Lind, E., 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. IEEE - Institute of Electrical and Electronics Engineers Inc., p. 3.2.1-3.2.4 7838336
Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Open Access
File
297 Downloads (Pure)

1 Supervision of PhD students

Cezar Zota
Lind, E. (First/primary/lead supervisor), Borg, M. (Joint second supervisor) & Wernersson, L.-E. (Joint second supervisor)
2017 Apr
Activity: Examination and supervision › Supervision of PhD students

Cite this

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title = "III-V MOSFETs for High-Frequency and Digital Applications",

abstract = "III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.",

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N1 - Defence details Date: 2017-05-12 Time: 10:15 Place: lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund External reviewer Name: Rodwell, Mark Title: Professor Affiliation: University of California, Santa Barbara, USA ---

PY - 2017/4/10

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N2 - III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.

AB - III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.

KW - III-V

KW - MOSFET

KW - Transistor

M3 - Doctoral Thesis (compilation)

SN - 978-91-7753-144-9

PB - Department of Electrical and Information Technology, Lund University

ER -

III-V MOSFETs for High-Frequency and Digital Applications

Abstract

Bibliographical note

Subject classification (UKÄ)

Free keywords

Access to Document

Fingerprint

Research output

A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs

1/f and RTS noise in InGaAs nanowire MOSFETs

InGaAs tri-gate MOSFETs with record on-current

Activities

Cezar Zota

Cite this