III-V MOSFETs for High-Frequency and Digital Applications

Cezar Zota

Research output: ThesisDoctoral Thesis (compilation)

1597 Downloads (Pure)

Abstract

III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. In this work, the limits of III-V FET performance, for both RF and VLSI applications, are explored experimentally.
Original languageEnglish
QualificationDoctor
Awarding Institution
  • Department of Electrical and Information Technology
Supervisors/Advisors
  • Lind, Erik, Supervisor
  • Wernersson, Lars-Erik, Supervisor
  • Lind, Erik, Supervisor
  • Borg, Mattias, Supervisor
Award date2017 May 12
Publisher
ISBN (Print)978-91-7753-144-9
ISBN (electronic) 978-91-7753-145-6
Publication statusPublished - 2017 Apr 10

Bibliographical note

Defence details
Date: 2017-05-12
Time: 10:15
Place: lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund
External reviewer
Name: Rodwell, Mark
Title: Professor
Affiliation: University of California, Santa Barbara, USA
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Subject classification (UKÄ)

  • Engineering and Technology

Keywords

  • III-V
  • MOSFET
  • Transistor

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