III-V MOSFETs for High-Frequency and Digital Applications

Cezar Zota

Research output: Thesis › Doctoral Thesis (compilation)

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2017
InGaAs tri-gate MOSFETs with record on-current
Zota, C. B., Lindelow, F., Wernersson, L. E. & Lind, E., 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. IEEE - Institute of Electrical and Electronics Engineers Inc., p. 3.2.1-3.2.4 7838336
Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

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2016
InGaAs nanowire MOSFETs with I_ON = 555 μa/μm at I_OFF = 100 nA/μm and V_DD = 0.5 v
Zota, C. B., Lindelöw, F., Wernersson, L. E. & Lind, E., 2016 Sept 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. IEEE - Institute of Electrical and Electronics Engineers Inc., 7573418
Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

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2014

In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
Zota, C., Wernersson, L.-E. & Lind, E., 2014, 2014 72nd Annual Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., p. 209-210
Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Research output