Research output per year
Research output per year
Search results
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2018
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Netsu, S., Hellenbrand, M., Zota, C. B., Miyamoto, Y. & Lind, E., 2018, In: IEEE Journal of the Electron Devices Society. 6, p. 408-412Research output: Contribution to journal › Article › peer-review
Open Access -
2017
1/f and RTS noise in InGaAs nanowire MOSFETs
Möhle, C., Zota, C. B., Hellenbrand, M. & Lind, E., 2017 Jun 25, In: Microelectronic Engineering. 178, p. 52-55Research output: Contribution to journal › Article › peer-review
File212 Downloads (Pure) -
2016
High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
Zota, C. B., Lindelöw, F., Wernersson, L. E. & Lind, E., 2016 Oct 27, In: Electronics Letters. 52, 22, p. 1869-1871 3 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile344 Downloads (Pure) -
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
Zota, C. B., Wernersson, L. E. & Lind, E., 2016 Oct 1, In: IEEE Electron Device Letters. 37, 10, p. 1264-1267 4 p., 7552490.Research output: Contribution to journal › Article › peer-review
Open AccessFile236 Downloads (Pure) -
Size-effects in indium gallium arsenide nanowire field-effect transistors
Zota, C. B. & Lind, E., 2016 Aug 8, In: Applied Physics Letters. 109, 6, 063505.Research output: Contribution to journal › Article › peer-review
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Single suspended InGaAs nanowire MOSFETs
Zota, C. B., Wernersson, L. E. & Lind, E., 2016 Feb 16, In: Technical Digest - International Electron Devices Meeting, IEDM. p. 31.4.1-31.4.4Research output: Contribution to journal › Article › peer-review
Open AccessFile218 Downloads (Pure) -
2015
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
Zota, C., Lindgren, D., Wernersson, L.-E. & Lind, E., 2015, In: ACS Nano. 9, 10, p. 9892-9897Research output: Contribution to journal › Article › peer-review
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2014
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
Zota, C., Wernersson, L.-E. & Lind, E., 2014, In: IEEE Electron Device Letters. 35, 3, p. 342-344Research output: Contribution to journal › Article › peer-review
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Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Zota, C., Roll, G., Wernersson, L.-E. & Lind, E., 2014, In: IEEE Transactions on Electron Devices. 61, 12, p. 4078-4083Research output: Contribution to journal › Article › peer-review