III-V Nanowire MOSFETs: RF-Properties and Applications

Lars Erik Wernersson

doi:10.1109/BCICTS48439.2020.9392932

III-V Nanowire MOSFETs: RF-Properties and Applications

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.

Original language	English
Title of host publication	2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728197494
DOIs	https://doi.org/10.1109/BCICTS48439.2020.9392932
Publication status	Published - 2020 Nov 16
Event	2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 - Monterey, United States Duration: 2020 Nov 16 → 2020 Nov 19

Conference

Conference	2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
Country/Territory	United States
City	Monterey
Period	2020/11/16 → 2020/11/19

Subject classification (UKÄ)

Nano-technology

Free keywords

High-frequency characteristics
III-V MOSFETs
III-V Nanowires

Access to Document

10.1109/BCICTS48439.2020.9392932

Cite this

@inproceedings{b61d7d7da8234b0094d36e752c11e0d1,

title = "III-V Nanowire MOSFETs: RF-Properties and Applications",

abstract = "III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.",

keywords = "High-frequency characteristics, III-V MOSFETs, III-V Nanowires",

author = "Wernersson, {Lars Erik}",

year = "2020",

month = nov,

day = "16",

doi = "10.1109/BCICTS48439.2020.9392932",

language = "English",

booktitle = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 ; Conference date: 16-11-2020 Through 19-11-2020",

}

Wernersson, LE 2020, III-V Nanowire MOSFETs: RF-Properties and Applications. in 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020., 9392932, IEEE - Institute of Electrical and Electronics Engineers Inc., 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, United States, 2020/11/16. https://doi.org/10.1109/BCICTS48439.2020.9392932

III-V Nanowire MOSFETs: RF-Properties and Applications. / Wernersson, Lars Erik.
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020. IEEE - Institute of Electrical and Electronics Engineers Inc., 2020. 9392932.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - III-V Nanowire MOSFETs

T2 - 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020

AU - Wernersson, Lars Erik

PY - 2020/11/16

Y1 - 2020/11/16

N2 - III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.

AB - III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.

KW - High-frequency characteristics

KW - III-V MOSFETs

KW - III-V Nanowires

UR - http://www.scopus.com/inward/record.url?scp=85104622717&partnerID=8YFLogxK

U2 - 10.1109/BCICTS48439.2020.9392932

DO - 10.1109/BCICTS48439.2020.9392932

M3 - Paper in conference proceeding

AN - SCOPUS:85104622717

BT - 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

Y2 - 16 November 2020 through 19 November 2020

ER -

III-V Nanowire MOSFETs: RF-Properties and Applications

Abstract

Conference

Subject classification (UKÄ)

Free keywords

Access to Document

Other files and links

Fingerprint

Cite this