III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications

Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg, Erik Lind

Research output: Contribution to journalArticlepeer-review

Abstract

We present a semi self-aligned processing scheme for III-V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on the perfect alignment of gate to contact areas to enable low overlap capacitances. The spacers give a field-plate effect that also helps reduce off-state and output conductance while increasing breakdown voltage. Microwave compatible devices with L g = 32 nm showing f T = 75 GHz and f max = 100 GHz are realized with the process, demonstrating matched performance to spacer-less devices but with relaxed scaling requirements.

Original languageEnglish
Article number065015
JournalSemiconductor Science and Technology
Volume35
Issue number6
DOIs
Publication statusPublished - 2020 Jun 1

Subject classification (UKÄ)

  • Telecommunications

Free keywords

  • InGaAs
  • InP
  • metal-oxide-semiconductor field-effect transistor
  • nanowire
  • radio-frequency
  • spacers

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  • III-V Nanowires for High-Speed Electronics

    Lindelöw, F., 2020 May 20, Series of licentiate and doctoral theses, 1654-790X ed. Lund, Sweden: Lund University. 130 p.

    Research output: ThesisDoctoral Thesis (compilation)

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