Research output per year
Research output per year
Fredrik Lindelöw, Navya Sri Garigapati, Lasse Södergren, Mattias Borg, Erik Lind
Research output: Contribution to journal › Article › peer-review
We present a semi self-aligned processing scheme for III-V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on the perfect alignment of gate to contact areas to enable low overlap capacitances. The spacers give a field-plate effect that also helps reduce off-state and output conductance while increasing breakdown voltage. Microwave compatible devices with L g = 32 nm showing f T = 75 GHz and f max = 100 GHz are realized with the process, demonstrating matched performance to spacer-less devices but with relaxed scaling requirements.
Original language | English |
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Article number | 065015 |
Journal | Semiconductor Science and Technology |
Volume | 35 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2020 Jun 1 |
Research output: Thesis › Doctoral Thesis (compilation)