III-V semiconductor nanowires for future devices

Heinz Schmid; Mattias Borg; K. Moselund; P. Das Kanungo; G. Signorello; S. Karg; P. Mensch; V. Schmidt; H. Riel

doi:10.7873/DATE2014.247

III-V semiconductor nanowires for future devices

Heinz Schmid, Mattias Borg, K. Moselund, P. Das Kanungo, G. Signorello, S. Karg, P. Mensch, V. Schmidt, H. Riel

IBM Research Zurich

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high I_on with high I_on/I_off ratio.

Original language	English
Title of host publication	Proceedings -Design, Automation and Test in Europe, DATE
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9783981537024
DOIs	https://doi.org/10.7873/DATE2014.247
Publication status	Published - 2014
Externally published	Yes
Event	17th Design, Automation and Test in Europe, DATE 2014 - Dresden, Germany Duration: 2014 Mar 24 → 2014 Mar 28

Conference

Conference	17th Design, Automation and Test in Europe, DATE 2014
Country/Territory	Germany
City	Dresden
Period	2014/03/24 → 2014/03/28

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

Esaki diodes
III-V semiconductors
nanowires
Tunnel FETs

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10.7873/DATE2014.247

Cite this

@inproceedings{b9221b7e3b6144db9f2a775e70f48612,

title = "III-V semiconductor nanowires for future devices",

abstract = "The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio.",

keywords = "Esaki diodes, III-V semiconductors, nanowires, Tunnel FETs",

author = "Heinz Schmid and Mattias Borg and K. Moselund and {Das Kanungo}, P. and G. Signorello and S. Karg and P. Mensch and V. Schmidt and H. Riel",

year = "2014",

doi = "10.7873/DATE2014.247",

language = "English",

isbn = "9783981537024",

booktitle = "Proceedings -Design, Automation and Test in Europe, DATE",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "17th Design, Automation and Test in Europe, DATE 2014 ; Conference date: 24-03-2014 Through 28-03-2014",

}

Schmid, H, Borg, M, Moselund, K, Das Kanungo, P, Signorello, G, Karg, S, Mensch, P, Schmidt, V & Riel, H 2014, III-V semiconductor nanowires for future devices. in Proceedings -Design, Automation and Test in Europe, DATE., 6800448, IEEE - Institute of Electrical and Electronics Engineers Inc., 17th Design, Automation and Test in Europe, DATE 2014, Dresden, Germany, 2014/03/24. https://doi.org/10.7873/DATE2014.247

TY - GEN

T1 - III-V semiconductor nanowires for future devices

AU - Schmid, Heinz

AU - Borg, Mattias

AU - Moselund, K.

AU - Das Kanungo, P.

AU - Signorello, G.

AU - Karg, S.

AU - Mensch, P.

AU - Schmidt, V.

AU - Riel, H.

PY - 2014

Y1 - 2014

N2 - The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio.

AB - The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio.

KW - Esaki diodes

KW - III-V semiconductors

KW - nanowires

KW - Tunnel FETs

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U2 - 10.7873/DATE2014.247

DO - 10.7873/DATE2014.247

M3 - Paper in conference proceeding

AN - SCOPUS:84903826882

SN - 9783981537024

BT - Proceedings -Design, Automation and Test in Europe, DATE

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th Design, Automation and Test in Europe, DATE 2014

Y2 - 24 March 2014 through 28 March 2014

ER -

III-V semiconductor nanowires for future devices

Abstract

Conference

Subject classification (UKÄ)

Free keywords

Access to Document

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Cite this