Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties

K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, Janusz Sadowski

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. High-resolution X-ray diffraction has been applied to characterize the structural quality and misfit strain in the films. Ferromagnetic Curie temperature and magnetocrystalline anisotropy of the films have been examined by using SQUID magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the films has been shown to reduce the strain in the films and to enhance their Curie temperature. Significant increase in the magnitude of magneto-transport effects caused by incorporation of a small amount of Bi into the films is interpreted as a result of enhanced spinorbit coupling in the (Ga, Mn)(Bi, As) films. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Original languageEnglish
Title of host publicationPhysica Status Solidi C
PublisherWiley-Blackwell
Pages1152-1155
Volume12
DOIs
Publication statusPublished - 2015
Event17th International Conference on Extended Defects in Semiconductors (EDS) - Göttingen, Germany
Duration: 2014 Sept 142014 Sept 19

Publication series

Name
Number8
Volume12
ISSN (Print)1862-6351
ISSN (Electronic)1610-1642

Conference

Conference17th International Conference on Extended Defects in Semiconductors (EDS)
Country/TerritoryGermany
CityGöttingen
Period2014/09/142014/09/19

Subject classification (UKÄ)

  • Other Materials Engineering
  • Condensed Matter Physics

Free keywords

  • Mn)(Bi
  • As)
  • (Ga
  • magnetic semiconductors
  • thin films
  • magneto-resistance
  • high-resolution
  • X-ray diffraction

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