In GaAs MOSFETs with InP Drain

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Original language	English
Title of host publication	2014 72nd Annyal Device Research Conference (DRC)
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	119-120
Publication status	Published - 2014
Event	72nd Annual Device Research Conference (DRC) - Santa Barbara, CA Duration: 2014 Jun 22 → 2014 Jun 25

Name
ISSN (Print)	1548-3770

Conference	72nd Annual Device Research Conference (DRC)
Period	2014/06/22 → 2014/06/25

Subject classification (UKÄ)

@inproceedings{4842ee7cfc8341b58bf04de2c72585b1,

title = "In GaAs MOSFETs with InP Drain",

author = "Jiongjiong Mo and Erik Lind and Lars-Erik Wernersson",

year = "2014",

language = "English",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

pages = "119--120",

booktitle = "2014 72nd Annyal Device Research Conference (DRC)",

address = "United States",

note = "72nd Annual Device Research Conference (DRC) ; Conference date: 22-06-2014 Through 25-06-2014",

}

TY - GEN

T1 - In GaAs MOSFETs with InP Drain

AU - Mo, Jiongjiong

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2014

Y1 - 2014

M3 - Paper in conference proceeding

SP - 119

EP - 120

BT - 2014 72nd Annyal Device Research Conference (DRC)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 72nd Annual Device Research Conference (DRC)

Y2 - 22 June 2014 through 25 June 2014

ER -