Abstract
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
Original language | English |
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Pages (from-to) | 264-270 |
Journal | Nano Reseach |
Volume | 3 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 |
Bibliographical note
The information about affiliations in this record was updated in December 2015.The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
Subject classification (UKÄ)
- Chemical Sciences
- Condensed Matter Physics
Free keywords
- MOVPE
- photoluminescence
- in situ etching
- nanowire growth