In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Simon P. Cooil; Federico Mazzola; Hagen W. Klemm; Gina Peschel; Yuran R. Niu; Alexei A. Zakharov; Michelle Y. Simmons; Thomas Schmidt; D. Andrew Evans; Jill A. Miwa; Justin W. Wells

doi:10.1021/acsnano.6b07359

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Simon P. Cooil, Federico Mazzola, Hagen W. Klemm, Gina Peschel, Yuran R. Niu, Alexei A. Zakharov, Michelle Y. Simmons, Thomas Schmidt, D. Andrew Evans, Jill A. Miwa, Justin W. Wells

MAX IV Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

Original language	English
Pages (from-to)	1683-1688
Number of pages	6
Journal	ACS Nano
Volume	11
Issue number	2
DOIs	https://doi.org/10.1021/acsnano.6b07359
Publication status	Published - 2017 Feb 28

Subject classification (UKÄ)

Condensed Matter Physics

Free keywords

2DEG
delta layers
LEEM
low-energy electron patterning
PEEM
silicon quantum confinement

Access to Document

10.1021/acsnano.6b07359

Cite this

@article{bd96e849c2b94924b4b2b3be451705c4,

title = "In Situ Patterning of Ultrasharp Dopant Profiles in Silicon",

abstract = "We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.",

keywords = "2DEG, delta layers, LEEM, low-energy electron patterning, PEEM, silicon quantum confinement",

author = "Cooil, {Simon P.} and Federico Mazzola and Klemm, {Hagen W.} and Gina Peschel and Niu, {Yuran R.} and Zakharov, {Alexei A.} and Simmons, {Michelle Y.} and Thomas Schmidt and Evans, {D. Andrew} and Miwa, {Jill A.} and Wells, {Justin W.}",

year = "2017",

month = feb,

day = "28",

doi = "10.1021/acsnano.6b07359",

language = "English",

volume = "11",

pages = "1683--1688",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "The American Chemical Society (ACS)",

number = "2",

}

TY - JOUR

T1 - In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

AU - Cooil, Simon P.

AU - Mazzola, Federico

AU - Klemm, Hagen W.

AU - Peschel, Gina

AU - Niu, Yuran R.

AU - Zakharov, Alexei A.

AU - Simmons, Michelle Y.

AU - Schmidt, Thomas

AU - Evans, D. Andrew

AU - Miwa, Jill A.

AU - Wells, Justin W.

PY - 2017/2/28

Y1 - 2017/2/28

N2 - We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

AB - We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

KW - 2DEG

KW - delta layers

KW - LEEM

KW - low-energy electron patterning

KW - PEEM

KW - silicon quantum confinement

UR - http://www.scopus.com/inward/record.url?scp=85014188880&partnerID=8YFLogxK

U2 - 10.1021/acsnano.6b07359

DO - 10.1021/acsnano.6b07359

M3 - Article

C2 - 28182399

AN - SCOPUS:85014188880

SN - 1936-0851

VL - 11

SP - 1683

EP - 1688

JO - ACS Nano

JF - ACS Nano

IS - 2

ER -

In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Abstract

Subject classification (UKÄ)

Free keywords

Access to Document

Other files and links

Fingerprint

Cite this