In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Mikael Egard; Mats Ärlelid; Lars Ohlsson; Mattias Borg; Erik Lind; Lars-Erik Wernersson

doi:10.1109/LED.2012.2194132

In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Mikael Egard, Mats Ärlelid, Lars Ohlsson, Mattias Borg, Erik Lind, Lars-Erik Wernersson

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.

Original language	English
Pages (from-to)	970-972
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2194132
Publication status	Published - 2012

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics (including Material Physics, Nano Physics)

Free keywords

generator
pulse
metal-oxide-semiconductor field-effect transistor (MOSFET)
metal-organic chemical vapor deposition regrowth
Impulse radio
InGaAs
resonant tunneling diode (RTD)
ultrawideband
wavelet

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/LED.2012.2194132

Cite this

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title = "In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator",

abstract = "We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.",

keywords = "generator, pulse, metal-oxide-semiconductor field-effect transistor (MOSFET), metal-organic chemical vapor deposition regrowth, Impulse radio, InGaAs, resonant tunneling diode (RTD), ultrawideband, wavelet",

author = "Mikael Egard and Mats {\"A}rlelid and Lars Ohlsson and Mattias Borg and Erik Lind and Lars-Erik Wernersson",

year = "2012",

doi = "10.1109/LED.2012.2194132",

language = "English",

volume = "33",

pages = "970--972",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

AU - Egard, Mikael

AU - Ärlelid, Mats

AU - Ohlsson, Lars

AU - Borg, Mattias

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2012

Y1 - 2012

N2 - We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.

AB - We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.

KW - generator

KW - pulse

KW - metal-oxide-semiconductor field-effect transistor (MOSFET)

KW - metal-organic chemical vapor deposition regrowth

KW - Impulse radio

KW - InGaAs

KW - resonant tunneling diode (RTD)

KW - ultrawideband

KW - wavelet

U2 - 10.1109/LED.2012.2194132

DO - 10.1109/LED.2012.2194132

M3 - Article

SN - 0741-3106

VL - 33

SP - 970

EP - 972

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Abstract

Subject classification (UKÄ)

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