In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Original languageEnglish
Title of host publication2014 72nd Annual Device Research Conference (DRC)
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Publication statusPublished - 2014
Event72nd Annual Device Research Conference (DRC) - Santa Barbara, CA
Duration: 2014 Jun 222014 Jun 25

Publication series

ISSN (Print)1548-3770


Conference72nd Annual Device Research Conference (DRC)

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering

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