@inproceedings{d8cf8d08c6c64196aaa00727976fef93,
title = "InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy",
abstract = "We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.",
author = "Philippe Caroff and Mattias Borg and D. Wheeler and M. Keplinger and Bernhard Mandl and J. Stangl and A. Seabaugh and G. Bauer and Lars-Erik Wernersson",
year = "2008",
doi = "10.1088/1742-6596/100/4/042017",
language = "English",
volume = "100",
publisher = "IOP Publishing",
pages = "042017",
booktitle = "Journal of Physics: Conference Series",
address = "United Kingdom",
note = "17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology ; Conference date: 02-07-2007 Through 06-07-2007",
}