InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy

Philippe Caroff, Mattias Borg, D. Wheeler, M. Keplinger, Bernhard Mandl, J. Stangl, A. Seabaugh, G. Bauer, Lars-Erik Wernersson

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.
Original languageEnglish
Title of host publicationJournal of Physics: Conference Series
PublisherIOP Publishing
Pages042017
Volume100
DOIs
Publication statusPublished - 2008
Event17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology - Stockholm, Sweden
Duration: 2007 Jul 22007 Jul 6

Publication series

Name
Volume100
ISSN (Print)1742-6596
ISSN (Electronic)1742-6588

Conference

Conference17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
Country/TerritorySweden
CityStockholm
Period2007/07/022007/07/06

Subject classification (UKÄ)

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

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