Abstract
InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.
Original language | English |
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Title of host publication | 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 |
Publisher | IEEE - Institute of Electrical and Electronics Engineers Inc. |
Volume | 2016-September |
ISBN (Electronic) | 9781509006373 |
DOIs | |
Publication status | Published - 2016 Sept 21 |
Event | 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States Duration: 2016 Jun 13 → 2016 Jun 16 |
Conference
Conference | 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 |
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Country/Territory | United States |
City | Honolulu |
Period | 2016/06/13 → 2016/06/16 |
Subject classification (UKÄ)
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics