InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

T. Vasen; P. Ramvall; A. Afzalian; C. Thelander; K. A. Dick; M. Holland; G. Doornbos; S. W. Wang; R. Oxland; G. Vellianitis; M. J H Van Dal; B. Duriez; J. R. Ramirez; R. Droopad; L. E. Wernersson; L. Samuelson; T. K. Chen; Y. C. Yeo; M. Passlack

doi:10.1109/VLSIT.2016.7573417

InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

T. Vasen, P. Ramvall, A. Afzalian, C. Thelander, K. A. Dick, M. Holland, G. Doornbos, S. W. Wang, R. Oxland, G. Vellianitis, M. J H Van Dal, B. Duriez, J. R. Ramirez, R. Droopad, L. E. Wernersson, L. Samuelson, T. K. Chen, Y. C. Yeo, M. Passlack

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. I_on = 314 μA/μm, and S_sat =68 mV/dec was achieved at V_dd = 0.5 V (I_off = 0.1 μA/μm). Highest g_m measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between g_m, R_on, and I_min are discussed.

Original language	English
Title of host publication	2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Volume	2016-September
ISBN (Electronic)	9781509006373
DOIs	https://doi.org/10.1109/VLSIT.2016.7573417
Publication status	Published - 2016 Sept 21
Event	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States Duration: 2016 Jun 13 → 2016 Jun 16

Conference

Conference	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
Country/Territory	United States
City	Honolulu
Period	2016/06/13 → 2016/06/16

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics (including Material Physics, Nano Physics)

Access to Document

10.1109/VLSIT.2016.7573417

Cite this

Vasen, T., Ramvall, P., Afzalian, A., Thelander, C., Dick, K. A., Holland, M., Doornbos, G., Wang, S. W., Oxland, R., Vellianitis, G., Van Dal, M. J. H., Duriez, B., Ramirez, J. R., Droopad, R., Wernersson, L. E., Samuelson, L., Chen, T. K., Yeo, Y. C., & Passlack, M. (2016). InAs nanowire GAA n-MOSFETs with 12-15 nm diameter. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 (Vol. 2016-September). Article 7573417 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573417

@inproceedings{febeb38a9d9c48428656743961e7a0af,

title = "InAs nanowire GAA n-MOSFETs with 12-15 nm diameter",

abstract = "InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.",

author = "T. Vasen and P. Ramvall and A. Afzalian and C. Thelander and Dick, \{K. A.\} and M. Holland and G. Doornbos and Wang, \{S. W.\} and R. Oxland and G. Vellianitis and \{Van Dal\}, \{M. J H\} and B. Duriez and Ramirez, \{J. R.\} and R. Droopad and Wernersson, \{L. E.\} and L. Samuelson and Chen, \{T. K.\} and Yeo, \{Y. C.\} and M. Passlack",

year = "2016",

month = sep,

day = "21",

doi = "10.1109/VLSIT.2016.7573417",

language = "English",

volume = "2016-September",

booktitle = "2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 ; Conference date: 13-06-2016 Through 16-06-2016",

}

Vasen, T, Ramvall, P, Afzalian, A, Thelander, C , Dick, KA, Holland, M, Doornbos, G, Wang, SW, Oxland, R, Vellianitis, G, Van Dal, MJH, Duriez, B, Ramirez, JR, Droopad, R, Wernersson, LE , Samuelson, L, Chen, TK, Yeo, YC & Passlack, M 2016, InAs nanowire GAA n-MOSFETs with 12-15 nm diameter. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. vol. 2016-September, 7573417, IEEE - Institute of Electrical and Electronics Engineers Inc., 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 2016/06/13. https://doi.org/10.1109/VLSIT.2016.7573417

TY - GEN

T1 - InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

AU - Vasen, T.

AU - Ramvall, P.

AU - Afzalian, A.

AU - Thelander, C.

AU - Dick, K. A.

AU - Holland, M.

AU - Doornbos, G.

AU - Wang, S. W.

AU - Oxland, R.

AU - Vellianitis, G.

AU - Van Dal, M. J H

AU - Duriez, B.

AU - Ramirez, J. R.

AU - Droopad, R.

AU - Wernersson, L. E.

AU - Samuelson, L.

AU - Chen, T. K.

AU - Yeo, Y. C.

AU - Passlack, M.

PY - 2016/9/21

Y1 - 2016/9/21

N2 - InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.

AB - InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.

UR - https://www.scopus.com/pages/publications/84991011523

U2 - 10.1109/VLSIT.2016.7573417

DO - 10.1109/VLSIT.2016.7573417

M3 - Paper in conference proceeding

AN - SCOPUS:84991011523

VL - 2016-September

BT - 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016

Y2 - 13 June 2016 through 16 June 2016

ER -

InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

Abstract

Conference

Subject classification (UKÄ)

Access to Document

Other files and links

Fingerprint

Cite this