InAs nanowire metal-oxide-semiconductor capacitors

Stefano Roddaro; Kristian Storm; Gvidas Astromskas; Lars Samuelson; Lars-Erik Wernersson; Olov Karlström; Andreas Wacker

doi:10.1063/1.2949080

InAs nanowire metal-oxide-semiconductor capacitors

Stefano Roddaro, Kristian Storm, Gvidas Astromskas, Lars Samuelson, Lars-Erik Wernersson, Olov Karlström, Andreas Wacker

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Abstract

We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

Original language	English
Article number	253509
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2949080
Publication status	Published - 2008

Subject classification (UKÄ)

Condensed Matter Physics

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10.1063/1.2949080

apl2008rodarro

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@article{88cf0ba32dd246eeae6ad003e2ba1886,

title = "InAs nanowire metal-oxide-semiconductor capacitors",

abstract = "We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.",

author = "Stefano Roddaro and Kristian Storm and Gvidas Astromskas and Lars Samuelson and Lars-Erik Wernersson and Olov Karlstr{\"o}m and Andreas Wacker",

year = "2008",

doi = "10.1063/1.2949080",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "25",

}

TY - JOUR

T1 - InAs nanowire metal-oxide-semiconductor capacitors

AU - Roddaro, Stefano

AU - Storm, Kristian

AU - Astromskas, Gvidas

AU - Samuelson, Lars

AU - Wernersson, Lars-Erik

AU - Karlström, Olov

AU - Wacker, Andreas

PY - 2008

Y1 - 2008

N2 - We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

AB - We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

U2 - 10.1063/1.2949080

DO - 10.1063/1.2949080

M3 - Article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253509

ER -

InAs nanowire metal-oxide-semiconductor capacitors

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