InAs nanowire MOSFET differential active mixer on Si-substrate

Karl-Magnus Persson, Martin Berg, Henrik Sjöland, Erik Lind, Lars-Erik Wernersson

Research output: Contribution to journalArticlepeer-review

7 Citations (SciVal)

Abstract

An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
Original languageEnglish
Pages (from-to)682
JournalElectronics Letters
Volume50
Issue number9
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • circuit
  • RF
  • InAs
  • mixer
  • nanowire
  • MOSFET

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