InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.

Engineering

• Transistor 100%
• Mixers (Machinery) 100%
• Performance 50%
• Networks (Circuits) 50%
• III-V Semiconductor 50%
• Electronics 50%
• Electric Power Utilization 50%
• Voltage 50%
• Nanowire Device 50%
• Si Substrate 50%
• Supply Voltage 50%
• Conversion Gain 50%
• Low Frequency 50%
• Optical Lithography 50%

Material Science

• Nanowire 100%
• Electronic Circuit 100%
• Transistor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Devices 50%
• III-V Semiconductor 50%
• Electrode 50%
• Buffer Layer 50%
• Lithography 50%