InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition

Engineering

• Atomic Layer Deposition 100%
• Oxide Layer 100%
• Defects 66%
• High Vacuum 66%
• Device Performance 66%
• Lower Energy 33%
• Photoemission 33%
• III-V Semiconductor 33%
• Substrates 33%
• Density 33%
• Voltage 33%
• Metal Oxide Semiconductor 33%
• Interface Trap 33%
• Surface Morphology 33%
• Scanning Tunneling Microscopy 33%
• Atomic Hydrogen 33%
• Ambient Air 33%
• Energy Electron Diffraction 33%
• Annealing 33%
• Reference Sample 33%
• Gate Stack 33%
• Oxide Semiconductor 33%
• Semiconductor Structure 33%

Material Science

• Oxide Compound 100%
• Oxidation Reaction 100%
• Oxide Interface 100%
• Devices 25%
• Air 12%
• III-V Semiconductor 12%
• Density 12%
• Metal Oxide 12%
• X-Ray Photoelectron Spectroscopy 12%
• Crystalline Material 12%
• Capacitance 12%
• Surface Structure 12%
• Microscopy 12%
• Al2O3 12%
• Permittivity 12%
• Low-Energy Electron Diffraction 12%
• Annealing 12%