InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

M. S. Park; Vishal Jain; E. H. Lee; S. H. Kim; Håkan Pettersson; Q. Wang; J. D. Song; W. J. Choi

doi:10.1049/el.2014.2437

InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

M. S. Park, Vishal Jain, E. H. Lee, S. H. Kim, Håkan Pettersson, Q. Wang, J. D. Song, W. J. Choi

Research output: Contribution to journal › Article › peer-review

Abstract

High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

Original language	English
Pages (from-to)	1731-1732
Journal	Electronics Letters
Volume	50
Issue number	23
DOIs	https://doi.org/10.1049/el.2014.2437
Publication status	Published - 2014

Subject classification (UKÄ)

Condensed Matter Physics

Free keywords

millimetre wave integrated circuits
power combiners
transmission
lines
millimetre-wave broadband waveguide based power combiner
lossy
waveguide-based power combiner
lossy planar transmission lines
reflection coefficients
millimetre-wave broadband high solid-state
power
frequency 26
5 GHz to 40 GHz

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10.1049/el.2014.2437

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title = "InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K",

abstract = "High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.",

keywords = "millimetre wave integrated circuits, power combiners, transmission, lines, millimetre-wave broadband waveguide based power combiner, lossy, waveguide-based power combiner, lossy planar transmission lines, reflection coefficients, millimetre-wave broadband high solid-state, power, frequency 26, 5 GHz to 40 GHz",

author = "Park, {M. S.} and Vishal Jain and Lee, {E. H.} and Kim, {S. H.} and H{\aa}kan Pettersson and Q. Wang and Song, {J. D.} and Choi, {W. J.}",

year = "2014",

doi = "10.1049/el.2014.2437",

language = "English",

volume = "50",

pages = "1731--1732",

journal = "Electronics Letters",

issn = "1350-911X",

publisher = "IEE",

number = "23",

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TY - JOUR

T1 - InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

AU - Park, M. S.

AU - Jain, Vishal

AU - Lee, E. H.

AU - Kim, S. H.

AU - Pettersson, Håkan

AU - Wang, Q.

AU - Song, J. D.

AU - Choi, W. J.

PY - 2014

Y1 - 2014

N2 - High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

AB - High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

KW - millimetre wave integrated circuits

KW - power combiners

KW - transmission

KW - lines

KW - millimetre-wave broadband waveguide based power combiner

KW - lossy

KW - waveguide-based power combiner

KW - lossy planar transmission lines

KW - reflection coefficients

KW - millimetre-wave broadband high solid-state

KW - power

KW - frequency 26

KW - 5 GHz to 40 GHz

U2 - 10.1049/el.2014.2437

DO - 10.1049/el.2014.2437

M3 - Article

SN - 1350-911X

VL - 50

SP - 1731

EP - 1732

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

Abstract

Subject classification (UKÄ)

Free keywords

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