InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

M. S. Park, Vishal Jain, E. H. Lee, S. H. Kim, Håkan Pettersson, Q. Wang, J. D. Song, W. J. Choi

Research output: Contribution to journalArticlepeer-review

21 Citations (SciVal)

Abstract

High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
Original languageEnglish
Pages (from-to)1731-1732
JournalElectronics Letters
Volume50
Issue number23
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • millimetre wave integrated circuits
  • power combiners
  • transmission
  • lines
  • millimetre-wave broadband waveguide based power combiner
  • lossy
  • waveguide-based power combiner
  • lossy planar transmission lines
  • reflection coefficients
  • millimetre-wave broadband high solid-state
  • power
  • frequency 26
  • 5 GHz to 40 GHz

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