InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

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Abstract

Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at VDS = 0.3 V and 26 μA/μm at VDS = 0.3 V and VGS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages154-155
Number of pages2
ISBN (Electronic)9781509007264
DOIs
Publication statusPublished - 2016 Sep 27
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 2016 Jun 122016 Jun 13

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/TerritoryUnited States
CityHonolulu
Period2016/06/122016/06/13

Subject classification (UKÄ)

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

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