InAsP/InAs nanowire heterostructure field effect transistors

Erik Lind; Lars-Erik Wernersson

doi:10.1109/DRC.2006.305171

InAsP/InAs nanowire heterostructure field effect transistors

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

Original language	English
Title of host publication	Device Research Conference
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	173-174
ISBN (Print)	0-7803-9748-7
DOIs	https://doi.org/10.1109/DRC.2006.305171
Publication status	Published - 2006
Event	Device Research Conference, 2006 - University Park, PA, United States Duration: 2006 Jun 26 → 2006 Jun 28

Conference

Conference	Device Research Conference, 2006
Country/Territory	United States
City	University Park, PA
Period	2006/06/26 → 2006/06/28

Subject classification (UKÄ)

Condensed Matter Physics (including Material Physics, Nano Physics)
Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

nanowire heterostructure field effect transistors
InAsP-InAs

Access to Document

10.1109/DRC.2006.305171

Cite this

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title = "InAsP/InAs nanowire heterostructure field effect transistors",

abstract = "We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage",

keywords = "nanowire heterostructure field effect transistors, InAsP-InAs",

author = "Erik Lind and Lars-Erik Wernersson",

year = "2006",

doi = "10.1109/DRC.2006.305171",

language = "English",

isbn = "0-7803-9748-7",

pages = "173--174",

booktitle = "Device Research Conference",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

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note = "Device Research Conference, 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

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AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2006

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N2 - We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

AB - We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

KW - nanowire heterostructure field effect transistors

KW - InAsP-InAs

UR - https://www.scopus.com/pages/publications/50649125407

U2 - 10.1109/DRC.2006.305171

DO - 10.1109/DRC.2006.305171

M3 - Paper in conference proceeding

SN - 0-7803-9748-7

SP - 173

EP - 174

BT - Device Research Conference

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - Device Research Conference, 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

InAsP/InAs nanowire heterostructure field effect transistors

Abstract

Conference

Subject classification (UKÄ)

Free keywords

Access to Document

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Cite this