Influence of contacts and applied voltage on a structure of a single GaN nanowire

Sergey Lazarev, Young Yong Kim, Luca Gelisio, Zhaoxia Bi, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas F. Keller, Michael Sprung, Anders Mikkelsen, Lars Samuelson, Ivan A. Vartanyants

Research output: Contribution to journalArticlepeer-review

Abstract

Semiconductor nanowires (NWs) have a broad range of applications for nano-and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.

Original languageEnglish
Article number9419
JournalApplied Sciences (Switzerland)
Volume11
Issue number20
DOIs
Publication statusPublished - 2021 Oct 1

Subject classification (UKÄ)

  • Physical Sciences

Keywords

  • Bragg coherent diffraction
  • Finite element method
  • GaN nanowires
  • Piezoelectric effect

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