InN quantum dots on GaN nanowires grown by MOVPE

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Abstract

In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Original languageEnglish
Title of host publicationPhysica Status Solici C: Current Topics in Solid State Physics, Vol 11, No 3-4
PublisherJohn Wiley & Sons Inc.
Pages421-424
Volume11
DOIs
Publication statusPublished - 2014
Event10th International Conference on Nitride Semiconductors (ICNS) - Washington, DC
Duration: 2013 Aug 252013 Aug 30

Publication series

Name
Number3-4
Volume11
ISSN (Print)1610-1642
ISSN (Electronic)1862-6351

Conference

Conference10th International Conference on Nitride Semiconductors (ICNS)
Period2013/08/252013/08/30

Subject classification (UKÄ)

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • quantum dots
  • nanowires
  • nitride
  • MOVPE

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