Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

Research output: ThesisDoctoral Thesis (compilation)

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The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. As ferroelectric HfO2 on III-V semiconductors is a nascent technology, a special emphasis is put on the fundamental integration issues and the various engineering challenges facing the technology.

The fabrication of metal-oxide-semiconductor (MOS) capacitors is treated as well as the measurement methods developed to investigate the interfacial quality to the narrow bandgap III-V materials using both electrical and operando synchrotron light source techniques. After optimizing both the films and the top electrode, the gate stack is integrated onto vertical InAs nanowires on Si in order to successfully implement FeFETs. Their performance and reliability can be explained from the deeper physical understanding obtained from the capacitor structures.

By introducing an InAs/(In)GaAsSb/GaSb heterostructure in the nanowire, a ferroelectric tunnel field effect transistor (ferro-TFET) is fabricated. Based on the ultra-short effective channel created by the band-to-band tunneling process, the localized potential variations induced by single ultra-scaled ferroelectric domains and individual defects are sensed and investigated. By intentionally introducing a gate-source overlap in the ferro-TFET, a non-volatile reconfigurable single-transistor solution for modulating an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing is implemented.

Finally, by fabricating scaled ferroelectric MOS capacitors in the front-end with a dedicated and adopted RF and mm-wave backend-of-line (BEOL) implementation, the ferroelectric behavior is captured at RF and mm-wave frequencies.
Original languageEnglish
Awarding Institution
  • Department of Electrical and Information Technology
  • Wernersson, Lars-Erik, Supervisor
  • Borg, Mattias, Supervisor
Award date2023 May 12
Place of PublicationLund
ISBN (Print)978-91-8039-673-8
ISBN (electronic) 978-91-8039-674-5
Publication statusPublished - 2023 Apr

Bibliographical note

Defence details
Date: 2023-05-12
Time: 09:15
Place: Lecture Hall E:1406, building E, Ole Römers väg 3, Faculty of Engineering LTH, Lund University, Lund. The dissertation will be live streamed, but part of the premises is to be excluded from the live stream.
External reviewer(s)
Name: Mikolajick, Thomas
Title: Prof.
Affiliation: Technical University Dresden, Germany.

Subject classification (UKÄ)

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
  • Nano Technology

Free keywords

  • ferroelectricity
  • ferroelectric FET
  • ferroelectric tunnel junction
  • tunnel field effect transistors
  • HZO
  • III-V
  • nanowire


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