Integration of InSb on Si by Rapid Melt Growth

Engineering

• High Quality 100%
• Microstructure 100%
• Low Cost 50%
• III-V Semiconductor 50%
• Process Development 50%
• Melting Point 50%
• High Frequency 50%
• Ray Diffraction 50%
• Nanoscale 50%
• Growth Process 50%
• Atomic Force Microscopy 50%
• Si Substrate 50%
• Crystal Structure 50%
• Semiconductor 50%
• Digital Circuits 50%
• Electrical Measurement 50%

Material Science

• Microstructure 100%
• Epitaxy 100%
• Characterization 50%
• III-V Semiconductor 50%
• Electronic Circuit 50%
• Silicon 50%
• Electron Backscatter Diffraction 50%
• Liquid 50%
• Crystalline Material 50%
• Amorphous Material 50%
• Quantum Device 50%
• Semiconductor Material 50%
• Microscopy 50%
• Crystal Structure 50%