Abstract
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Original language | English |
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Pages (from-to) | 452-459 |
Journal | IEEE Transactions on Electron Devices |
Volume | 61 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2014 |
Subject classification (UKÄ)
- Nano Technology
- Electrical Engineering, Electronic Engineering, Information Engineering
Free keywords
- nanowires (NWs)
- modeling
- Capacitor
- InAs