Intrinsic Performance of InAs Nanowire Capacitors

Kristofer Jansson, Erik Lind, Lars-Erik Wernersson

Research output: Contribution to journalArticlepeer-review

7 Citations (SciVal)

Abstract

The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Original languageEnglish
Pages (from-to)452-459
JournalIEEE Transactions on Electron Devices
Volume61
Issue number2
DOIs
Publication statusPublished - 2014

Subject classification (UKÄ)

  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • nanowires (NWs)
  • modeling
  • Capacitor
  • InAs

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