Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

Davide Cutaia; Heinz Schmid; Mattias Borg; Kirsten E. Moselund; Nicolas Bologna; Antonis Olziersky; Adrian Ionescu; Heike Riel

doi:10.1109/SNW.2016.7578028

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

Davide Cutaia, Heinz Schmid, Mattias Borg, Kirsten E. Moselund, Nicolas Bologna, Antonis Olziersky, Adrian Ionescu, Heike Riel

NanoLund: Centre for Nanoscience

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.

Original language	English
Title of host publication	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	152-153
Number of pages	2
ISBN (Electronic)	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7578028
Publication status	Published - 2016 Sept 27
Event	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 2016 Jun 12 → 2016 Jun 13

Conference

Conference	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/Territory	United States
City	Honolulu
Period	2016/06/12 → 2016/06/13

Subject classification (UKÄ)

Other Electrical Engineering, Electronic Engineering, Information Engineering

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10.1109/SNW.2016.7578028

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Cutaia, D., Schmid, H., Borg, M., Moselund, K. E., Bologna, N., Olziersky, A., Ionescu, A., & Riel, H. (2016). Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 152-153). Article 7578028 IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7578028

@inproceedings{c90730c830a148e0a73e6ec37f94f6f0,

title = "Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs",

abstract = "We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.",

author = "Davide Cutaia and Heinz Schmid and Mattias Borg and Moselund, {Kirsten E.} and Nicolas Bologna and Antonis Olziersky and Adrian Ionescu and Heike Riel",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/SNW.2016.7578028",

language = "English",

pages = "152--153",

booktitle = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",

}

Cutaia, D, Schmid, H, Borg, M, Moselund, KE, Bologna, N, Olziersky, A, Ionescu, A & Riel, H 2016, Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs. in 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7578028, IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 152-153, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, United States, 2016/06/12. https://doi.org/10.1109/SNW.2016.7578028

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs. / Cutaia, Davide; Schmid, Heinz; Borg, Mattias et al.
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. IEEE - Institute of Electrical and Electronics Engineers Inc., 2016. p. 152-153 7578028.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

AU - Cutaia, Davide

AU - Schmid, Heinz

AU - Borg, Mattias

AU - Moselund, Kirsten E.

AU - Bologna, Nicolas

AU - Olziersky, Antonis

AU - Ionescu, Adrian

AU - Riel, Heike

PY - 2016/9/27

Y1 - 2016/9/27

N2 - We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.

AB - We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.

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DO - 10.1109/SNW.2016.7578028

M3 - Paper in conference proceeding

AN - SCOPUS:84994750609

SP - 152

EP - 153

BT - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016

Y2 - 12 June 2016 through 13 June 2016

ER -

Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs

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