Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Ivan Maximov; AA Zakharov; Tommy Holmqvist; Lars Montelius; Ingolf Lindau

doi:10.1116/1.1470509

Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Ivan Maximov, AA Zakharov, Tommy Holmqvist, Lars Montelius, Ingolf Lindau

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

Original language	English
Title of host publication	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Publisher	American Institute of Physics (AIP)
Pages	1139-1142
Volume	20
DOIs	https://doi.org/10.1116/1.1470509
Publication status	Published - 2002
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI Duration: 2001 Oct 1 → 2001 Oct 3

Publication series

Name
Number	3
Volume	20
ISSN (Print)	1520-8567
ISSN (Electronic)	1071-1023

Conference

Conference	20th North American Conference on Molecular Beam Epitaxy
Period	2001/10/01 → 2001/10/03

Subject classification (UKÄ)

Physical Sciences
Natural Sciences
Condensed Matter Physics (including Material Physics, Nano Physics)
Atom and Molecular Physics and Optics

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10.1116/1.1470509

Cite this

@inproceedings{7738bcdf8fa14928a064edd73d860233,

title = "Investigation of polymethylmethacrylate resist residues using photoelectron microscopy",

abstract = "Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.",

author = "Ivan Maximov and AA Zakharov and Tommy Holmqvist and Lars Montelius and Ingolf Lindau",

year = "2002",

doi = "10.1116/1.1470509",

language = "English",

volume = "20",

publisher = "American Institute of Physics (AIP)",

number = "3",

pages = "1139--1142",

booktitle = "Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures",

address = "United States",

note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

}

Maximov, I, Zakharov, AA, Holmqvist, T, Montelius, L & Lindau, I 2002, Investigation of polymethylmethacrylate resist residues using photoelectron microscopy. in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. vol. 20, American Institute of Physics (AIP), pp. 1139-1142, 20th North American Conference on Molecular Beam Epitaxy, 2001/10/01. https://doi.org/10.1116/1.1470509

Investigation of polymethylmethacrylate resist residues using photoelectron microscopy. / Maximov, Ivan; Zakharov, AA; Holmqvist, Tommy et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Vol. 20 American Institute of Physics (AIP), 2002. p. 1139-1142.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

AU - Maximov, Ivan

AU - Zakharov, AA

AU - Holmqvist, Tommy

AU - Montelius, Lars

AU - Lindau, Ingolf

PY - 2002

Y1 - 2002

N2 - Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

AB - Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

U2 - 10.1116/1.1470509

DO - 10.1116/1.1470509

M3 - Paper in conference proceeding

VL - 20

SP - 1139

EP - 1142

BT - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

PB - American Institute of Physics (AIP)

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Abstract

Publication series

Conference

Subject classification (UKÄ)

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