Abstract
Lifetimes for the3S1,3P0, 1, 2 and3D1, 2, 3 states in the 3s23p5p configuration of silicon have been determined using stepwise dye laser excitation and time resolved detection. A comparison is made with theoretical values, calculated using multi-configuration Hartree-Fock wavefunctions. Laser-evaporation was used to produce free silicon atoms by focusing a Nd: YAG laser on a rotating silicon target.
Original language | English |
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Pages (from-to) | 29-31 |
Journal | Zeitschrift für Physik D Atoms, Molecules and Clusters |
Volume | 13 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1989 |
Subject classification (UKÄ)
- Atom and Molecular Physics and Optics
Keywords
- Physics and Astronomy