Investigations of radiative lifetimes in the 3p 5p configuration of neutral silicon

H Bergstrom, G. W Faris, H Hallstadius, Hans Lundberg, A Persson

Research output: Contribution to journalArticlepeer-review

Abstract

Lifetimes for the3S1,3P0, 1, 2 and3D1, 2, 3 states in the 3s23p5p configuration of silicon have been determined using stepwise dye laser excitation and time resolved detection. A comparison is made with theoretical values, calculated using multi-configuration Hartree-Fock wavefunctions. Laser-evaporation was used to produce free silicon atoms by focusing a Nd: YAG laser on a rotating silicon target.
Original languageEnglish
Pages (from-to)29-31
JournalZeitschrift für Physik D Atoms, Molecules and Clusters
Volume13
Issue number1
DOIs
Publication statusPublished - 1989

Subject classification (UKÄ)

  • Atom and Molecular Physics and Optics

Keywords

  • Physics and Astronomy

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